Hall Effect in p-Type Germanium at High Electric Field
スポンサーリンク
概要
- 論文の詳細を見る
The Hall coefficient and the mobility of p-type Ge were measured at 290°K and 195°K in the non-Ohmic or "hot electron" region by pulse technique. The Hall coefiicient measured at 930 gauss decreased at much lower electric field compared with the case of the mobility. This was interpreted as the light hole mobility decreasing with increasing field more strongly than the heavy hole mobility. The data at 290°K were analyzed quantitatively on the assumption that the two types of holes have different temperatures.
- 社団法人日本物理学会の論文
- 1965-02-05
著者
-
Yamamoto Ryoichi
Research Center for Advanced Science and Technology, University of Tokyo
-
Ikeda Mitsusuke
Research Laboratory Wireless Division Matsushita Electric Industrial Company
-
Ikeda Mitsusuke
Research Lab. Wireless Div. Matsushita Elec. Ind. Co. Ltd.
-
Sato Hisanao
Research Department Wireless Division Matsushita Electric Industrial Co. Ltd.
-
Yamamoto Ryoichi
Research Laboratory Wireless Division Matsushita Electric Industrial Company
-
Yamamoto Ryoichi
Research Center For Advanced Science And Technology University Of Tokyo
関連論文
- Anomalous Field Dependence of Hall Resistivity in Fe/Cr Multilayers
- Theoretical Study on the Magnetocrystalline Anisotropy of X/Co (X=Pd,Pt,Cu,Ag,Au) Multilayers
- Isolation of a Bacterium Assimilating (R)-3-Chloro-1,2-Propanediol and Production of (S)-3-Chloro-1,2-Propanediol Using Microbial Resolution
- Visible Electroluminescence from p-n Junctions in Cd_Mg_xTe
- Dielectric Breakdown of Polycrystalline BaTiO_3
- Hall Effect in p-Type Germanium at High Electric Field
- Note on the Field Dependence of the Mobility in Semiconductors
- Effects of Impurity-Vacancy Complex on the Degree of Compensation in Compoound Semicoonductors
- Phonon-Drag Thermoelectric Effect in Piezoelectric Semiconductors
- Piezo-Hall Effect in p-Type Germanium
- Current Oscillations in CdS