Possible Mechanism of Semiconductive Temperature Dependence of c-Axis Resistivity in the Normal State of High-T_c Superconductors: Renormalization Effect of Fermi Surface by Antiferromagnetic Spin Fluctuations : Condensed Matter: Electronic Properties, et

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We propose a mechanism of the semiconductive temperature dependence of the c-axis resistivity (ρ_c) in the normal state of high-T_c superconductors. We show that antiferromagnetic spin fluctuations in the CuO_2-layer affect the temperature dependence of' the Fermi surface shape and that they decrease (increase) the conductive carrier density (band mass) in the c-direction. Thus, when this effect dominates the temperature dependence of ρ_c, ρ_c increases at low temperatures. On the other hand, in the in-plane direction, the AF spin fluctuations do not affect the carrier density while they decrease the so-called k-mass at low temperatures. As a consequence, taking into account the damping rate which is caused by the electron-electron interaction, we obtain the in-plane resistivity (ρ_<ab>) which decreases with decreasing temperature. Thus, the present mechanism can explain the semiconductive temperature dependence of p. satisfying the metallic behavior of ρ_<ab>.
社団法人日本物理学会の論文
2001-01-15