Carrier Concentration Dependence of Spectral Functions in Strongly Correlated System : Study by the Dynamical Mean Field Theory
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概要
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We study the forznation of itinerant electronic states on carrier doping in a strongly correlatedinsulator by calctrlating one-particle-excitation spectral f'tnnctions. We apply (l) the quanttrm]VIonte Carlo method and (2) the exact diagonalization ztuethod in the framework of the dynarnicalmean field theory to a two-band Hubbard tnodel. The paranaeters of the model are chosen so thatthe tnndoped systena is a charge-transfer-type insulator. We find that the itinerant states originatefrom local singlet states forn'xed by hybridized d- and 7t-holes. We also find asymnaetry betweenhole-doped and electron-doped cases: (l) in the electron-doped case a peak is not observedat the chetnical potential in contrast to the hole-doped c?rse; and (2) the mass-enhancementfactor in the electron-doped case is smaller than that in the hole-doped case. The results of theone-p?trticle-excitation spectrtrm and the mass-enhancement f'actor are discussed in the light ofexperin?ental and theoretical results for high-T. cuprates.
- 社団法人日本物理学会の論文
- 1997-09-15
著者
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TAKAHASHI Hideaki
Institute of Physics,University of Tsukuba
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Mutou Tetsuya
Institute Of Physics University Of Tsukuba
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Hirashima Dai
Institute Of Physics College Of Arts And Sciences University Of Tokyo
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Hirashima Dai
Institute Of Physics College Of Arts And Science University Of Tokyo
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Takahashi H
Institute Of Physics University Of Tsukuba
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Takahashi Hideaki
Institute Of Foreign Language Education And Research Kansai University
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Takahashi Hideaki
Institute Of Physics University Of Tsukuba
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