Two-Photon Resonant Raman Scattering in Red-HgI_2
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概要
- 論文の詳細を見る
The two-photon resonant Raman scattering (TRRS) process via the excitonicmolecule (EM) state in red-Hg[. is studied at 1.6 K. The intensity of the TRRSline is enhanced with FWHM 0.7 meV at 2.3324 eV which corresponds to a halfof the EM enern>'. From the analvsis of the TRRS data, the disrersion curve ofthetransverse exciton polariton is determined : The transverse exciton energy and itseffective mass relative to the electron rest mass are obtained as 2.3348 f0.0001 eVand 1.3.[0.l, respectively. The background dielectric constant, e., is determinedto be 10.5f0.5 from the Fabry-Perot interference fringes of a thin single crystal.
- 社団法人日本物理学会の論文
- 1984-07-15
著者
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NAGASAWA Nobukata
Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science
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ISHIHARA Teruya
Department fo Physical Electronics, Hiroshima University
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Ishihara Teruya
Department Of Physics Faculty Of Science The University Of Tokyo:department Of Physics Faculty Of Sc
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Nagasawa Nobukata
Department Of Physics Faculty Of Science The University Of Tokyo
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