Inverse Raman Scattering Resonant to Excitonic Polaritons in Red-HgI_2 and 2H-PbI_2
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概要
- 論文の詳細を見る
Inverse Raman scattering resonant to excitonic polariton states in red-Hgl. and 2H-Pbl. single crystals at 1.6 K is observed. The inver:;e Raman absorption line shape iscalculated with a polariton dispersion relation renormalized by the intense pumplaser. Deformation potentials for A.. optical phonons are estimated from the Ramancross sections to be about 2 eV for these materials, which are rather small comparedto those of T transverse optical phonons in tetrahedral semiconductors.
- 社団法人日本物理学会の論文
- 1988-07-15
著者
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ISHIHARA Teruya
Department fo Physical Electronics, Hiroshima University
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Ishihara Teruya
Department Of Physics Faculty Of Science Tohoku University
関連論文
- Optical Properties and Electronic Structures of Self-Organized Quantum Well (C_nH_NH_3)_2PbX_4 (X=I,Br,Cl)
- Two-Photon Resonant Raman Scattering in Red-HgI_2
- Beating Structure on the Spectrally Resolved Four-Wave Mixing: Polarization Dependence : Condensed Matter: Electronic Properties, etc.
- Large Optical Nonlinearity Due to Exciton State in PbI_2
- Directionally Enhanced Photoluminescence from Distributed Feedback Cavity Polaritons
- Inverse Raman Scattering Resonant to Excitonic Polaritons in Red-HgI_2 and 2H-PbI_2
- Exciton Features in 0-, 2-, and 3-Dimensional Networks of [PbI_6]^ Octahedra