Effect of Pressure on the Raman Shift in Ge

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概要

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• Pressure effect on the first order Raman shift in Ge was measured up to themetallic transformation at 100 kbar using a diamond anvil cell. The optic modeGrQneisen parameter was estimated to be 0.88:E0.08. The semiconductor-metaltransition was confirmed by observing the Raman profile of metastable Ge III.Two strong Raman peaks of Ge III were observed at freqtteneies co=250.4.2 cm 'and?298f2cm '

• 社団法人日本物理学会の論文
• 1978-09-15

著者

• Minomura Shigeru

  Institute For Solid State Physics The University Of Tokyo

• Minomura Shigeru

  Institute For Solid State Physics University Of Tokyo

• Asaumi Katsuyuki

  Institute For Solid State Physics University Of Tokyo

• MINOMURA Shigeru

  Institute for Solid State Physics,University of Tokyo

関連論文

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• Pressure Dependence of Curie Point and Tetragonal-Orthorhombic Transition Point of BaTiO_3
• Lattice Vibrational Properties of Crystalline Si-Ge Alloys
• V^ Nuclear Magnetic Resonance in V_2O_3
• X-Ray Photoemission Spectra of Valence Bands in Amorphous Ge-Ni, Ge-Fe and Ge-Au Alloys
• Point Group Symmetry of NH_4LiSO_4 at High Pressure Phase
• Effect of the Hydrostatic Pressure on the Ferroelastic NdP_5O_
• The Effect of Pressure on the Metal-to-Inslator Transition in V_2O_4 and V_2O_3
• Solid-Liquid Phase Diagrams of n-Paraffin and Polyethylene
• Pressure Dependence of NMR Shift of F^ in KNiF_3
• Effect of Pressure on the Electron Transport Properties of Liquid Alkali Metals
• Pressure-Induced Structural Transformations in Amorphous InSb
• Compression of the Sputtered NaCl-type InSb
• Effect of Pressure on the Raman Shift in Ge
• The effect of pressure on the dissociation of weak acids in aqueous buffers.

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