Lifetime Measurements of the 119 and 206 keV levels in ^<135>La
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1970-09-05
著者
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Nagai Yasuki
Department Of Applied Physics Tokyo Institute Of Technology:(present Address) Department Of Physics
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Hisatake Kazuo
Department Of Applied Physics Tokyo Institute Of Technology
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Akiba Mitsunori
Department Of Applied Physics Tokyo Institute Of Technology
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HISATAKE Kazuo
Department of Applied Physics, Tokyo Institute of Technology
関連論文
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- The Magnetic Moment of the Second Excited State in ^Al
- Gamma Rays from the Reaction ^Al(p,γ)^Si
- Penetration Effect and Transition Probability of the 5/2^⇾7/2^+ Transition in ^La
- Angular Distributions of High Energy Gamma Rays from the F^(p, γ)Ne^ Reaction
- Existence of a New Isomer of T_=24.4 hr in ^Tb
- A Digital Gate Unit for Multiparameter Pulse Height Analysis
- Electron-Gamma Angular Correlation Apparatus Using A Si (Li) Detector
- The Decay of Ba^ and Excited Levels in Cs^
- Q-Value Determination of the β^+ Decay of ^Zn
- Remeasurement of the Lifetime of the 119 keV Level in ^La
- Lifetime Measurements of the 119 and 206 keV levels in ^La
- Lifetime of the 334 keV Level in ^Pd
- Reinvestigation of the Decay of 2.2 Hour 138Pr
- A method for preparing a large sized, uniform and stable built-up film of 109Cd icosanoate as a radioactive source by utilization of an extremely small amount of substrate solution.
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