Solitonic Generation of Valence Alternation Pairs in As_2S_3
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概要
- 論文の詳細を見る
The crystal structure of As.S. has degeneracies of two kinds as shown in a previouspaper. By inserting locally other possible degenerate structures to a ground state,valence alternation pairs (VAP) can be generated as soliton like defects. Thedegeneracies concerning the arrangement of lone pairs and the directions of interhelixcovalent bonds lead, respectively, to the generations of the VAPs of C.-C3 and P.-P.types. We calculate the structures and formation energies of the VAP's by using avalence force field model. The formation energy of a VAP is large in multilayeredcrystal but much reduced in a single layer suggesting its easy production in amor-phous regions. Production of VAP's induces changes of the layer structure in a sur-rounding region.
- 社団法人日本物理学会の論文
- 1990-08-15
著者
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FUKUTOME Hideo
Department of Physics, Kyoto University
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Fukutome Hideo
Department Of Physics Faculty Of Science Kyoto University
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Fukutome Hideo
Department Of Physics Kyoto University
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SHIMOI Yukihiro
Department of Physics,Faculty of Science,Kyoto University
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Shimoi Yukihiro
Department Of Physics Faculty Of Science Kyoto University
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Shimoi Yukihiro
Department Of Physics Kyoto University
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