Electronic States and Metal-Semiconductor Transition in BaPb_<1-x>Bi_xO_3
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概要
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The electronic structure of BaPb. .Bi.0, (BPB) is calculated in the framework ofmean field approximation and coherent potential approximation, describing the elecIronic motion in terms of the extended Hubbard model with two kinds of site-dependent parameters; difference in the on-site energies on Bi and Pb sites and effective on-site interaction due to the oxygen breathing modes. Three characteristic band-shapesare obtained as a function of Bi concentration ,X'; a single band and pseudo-gappedband for metallic phase and two separated bands for semiconducting phase, indicating that x plays a role similar to that of the temperature in the case of the Peierlsinstability. These results are successfully applied to interpret the main features ofmetal-semiconductor transition of BPB obtained from optical spectra.[electronic states, BaPb. .Bi.O, oxide superconductor, coherent potential ap- ll proximation (CPA), negative U model, theoryJ
- 社団法人日本物理学会の論文
- 1990-06-15
著者
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Ishii Chikara
Department Of Physics Faculty Of Science Science University Of Tokyo
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Inada Yasuzi
Department Of Physics Science University Of Tokyo
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