Condensation of Excitons in a Highly Excited State of Semiconductors
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概要
- 論文の詳細を見る
The condensation of excitons in a highly excited state of semiconductors or insulators is investigated without an assumption of excitons being bosons. The discussion is based on the quasi-chemical equilibrium theory and the dynamical correlation between electrons and/or holes is taken into account with an appropriate screening parameter. It turns out that the concentration of excitons in the ground level attains a finite value when n_<exc> exceeds a value n^c_<exc> which is identical to the critical concentration for the Bose-Einstein condensation in an ideal boson system. It is also seen that the excitons can be treated as bosons for n_<exc><n^c_<exc>, while the deviation of excitons from bosons becomes apparent for n_<exc>>n^c_<exc>. It is also mentioned how to determine the concentration of free pairs and of excitons against the total concentration of excited pairs. A favorable situation for the observation of the exciton condensation is also discussed.
- 社団法人日本物理学会の論文
- 1974-09-15
著者
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Horie Chuji
Department Of Applied Physics Tohoku University
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Horie Chuji
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Nagashima Tomitaro
Department Of Applied Physics Tohoku University
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NAGASHIMA Tomitaro
Department of Applied Physics, Tohoku University
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