Effect of Eiectron-Hole Scattering on Mobility in Indium Antimonide at High Electric Field

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A phenomenon of the decrease in drift velocities at high electric fields in n-type indium antimonide has already been reported by Kanai and by Glicksman et al. In this note, it is proposed experimentaly that the scattering mechanism of electrons in InSb at high fields where electron-hole pair creation occurs differs appreciably from that in low field. Simultaneous measurements of conductivity and Hall effect were made in magnetic field of 1 KG from 77°K to 300°K. It is assumed that the Hall coefficient is inversely proportional to the concentration of conduction electron, though the low field approximation cannot be strictly applied to the measurements at the range of our magnetic field. Thus obtained electron mobility μ_ε and drift velocity ν_d in high electric fields are plotted in Fig. 1. We can see that μ_ε decreases with increasing field above the critical field E〜__-200V/cm. The maximum value of the drift velocity decreases with the rise of the temperature, but the cridcal field does hardly change. To clarify the cause of the decrease in drift velocties at high electric field, the increase in reciprocal mobility Δ(1/μ) was plotted as a function of the increase in electron density Δn, putting 1μ =1/μ_0+Δ(1/μ), where μ and μ_0 are the obseaved mobilities at the high field and the mobilities obtained by extrapolation of lower field value respectively (Fig. 1). The in crease in reciprocal mobility can be reduced to corresponding increase in collision frequency 1/τ using the relation Δ(1/τ) =(e/m)・Δ(1/μ) as shown in Fig. 2, where e and m are elctron charge and effective mass respectively It should be noted that Δ(1/μ) and Δ(1/τ) are nearly proportional over wide range of temperature to Δn which is equal to the number of holes produced by impact ionization and also is not so sensitive to lattice temperature from 94°K to 180°K. These facts seem to suggest that carrier-carrier interaction is predominant scattering mechanism in the breakdown region.
社団法人日本物理学会の論文
1964-07-05

Effect of Eiectron-Hole Scattering on Mobility in Indium Antimonide at High Electric Field

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