斜方結像光学系を用いたX線露光装置用アライメントパターン検出法

概要

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A precision alignment-pattern detection method using diagonal detection optics and two-dimensional image processing technique has been developed to improve the alignment accuracy of X-ray exposure systems. This method features (1) consecutive pattern detection in an exposure field, (2) capability of detecting both lateral displacement and proximity gap between a mask and a wafer using the same detection optics, and (3) reduction of detection error caused by variations in the alignment-pattern fabrication process by using broad-spectrum (Xe light) illumination. According to the simulation of expected quantizing errors in image processing, a pixel resolution of O.18 μm has been selected to attain a detection resolution less than 0.02 μm. The detection accuracy of an experimental apparatus was investigated, checking the expected error due to variations of wafer alignment patterns, resulting in a detection accuracy of ±0.02μm for the lateral displacement detection and ±0.06 μm for the gap detection, respectively.
公益社団法人精密工学会の論文
1989-09-05