多孔質シリコン(Si)層の作製とEL発光現象

概要

論文の詳細を見る
It is demonstrated that porous silicon (PS) layers formed by the anodization of p-type Si wafers in HF-based solutions, exhibit definite electroluminescence (EL) in a visible range (red) during the anodic oxidation using an 6% HCI aqueous solution. The light emission is interrupted when the current flow stops in order to form the oxide layer at the PS/Si interface. After anodic oxidation, photoluminescence (PL) in a visible range (red) from the surface of the PS layers with an excitation of an Ar laser, was definitely observed, whereas any visible PL from an as-anodized PS layer was not observed. The highest PL emission intensity was detected by PS layers formed from p-Si (100) wafers with a 10-20Ω cm resistivity. However, in PS layers formed from p-Si (100) wafers with a 0.005Ω cm resistivity, PL emission was not observed. These results suggest that the anodic oxidation after anodization for PS layers is useful for visible PL enhancement.
東海大学の論文
2000-03-10