陽極酸化によるシリコン表面上への酸化膜の形成と評価

概要

論文の詳細を見る
An anodic oxidation on Si surface has been tried in order to gain information for the anodic oxidation on SiC which has been attracted a great deal of attention as a semiconductor material for operating devices at high temperature in near future. In this paper the anodic oxidation on Si surface has been investigated by systematically changing the pH values of electrolyte and electric current. The anodic oxide films have been characterized by ellipsometric and infrared absorption studies. High quality anodic oxide film on Si was formed at pH values of 9.00 and 5.95 in the electrolyte of NH_4OH solution.
愛知教育大学の論文
2001-03-01