方位像顕微鏡による気相成長させた炭化ケイ素の結晶成長の解析

概要

論文の詳細を見る
In order to clarify the process of crystal growth in vapor deposited silicon carbide (SiC), the distribution of grain orientation and grain boundary character of a plate cut from just above a substrate and a plate cut in parallel to the growth direction was analyzed by Orientation Imaging Microscopy (OIM). The process of crystal growth in vapor deposited SiC is as follows. The nuclei of $\beta$-SiC with random orientation are deposited on a substrate and subsequent crystal growth occurs, $\langle 110 \rangle$ direction as a preferred orientation. Crystals with $\Sigma 3$, $\Sigma 9$, and $\Sigma 27$ boundaries are predominantly observed and two of them, when they get in contact, forms random boundaries. The nuclei of $\alpha$-SiC are formed at random boundaries and grow to become $\alpha$-SiC crystals as large as 2 mm.
九州大学の論文
2000-06-30