Soft X-ray Charging Method for a Silicon Electret Condenser Microphone
スポンサーリンク
概要
- 論文の詳細を見る
A novel charging method using soft X-ray irradiation for forming an electret of a silicon condenser microphone was developed. Soft X-rays can penetrate through the microphone diaphragm and are suitable for ionizing gas inside the microphone element. The surface potential of a positively biased SiO2/Si3N4 dielectric film negatively increased with irradiation time, since induced anions and electrons are dragged toward the film by an applied electric field. The charging rate is inversely proportional to the bias voltage and electrode-gap distance. Charged electrets have excellent retention properties; therefore, the method is promising for the realization of silicon-electret condenser microphones.
- Japan Society of Applied Physicsの論文
- 2010-09-25
著者
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Hagiwara Kei
Nhk Science And Technology Research Laboratories
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Goto Masahide
Nhk Science And Technology Research Laboratories
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Goto Masahide
Nhk Science And Technical Research Laboratories
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Kodama Hidekazu
Kobayasi Institute Of Physical Research
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Hagiwara Kei
Nhk Sci. & Technical Res. Lab. Tokyo Jpn
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Iguchi Yoshinori
NHK Engineering Services, Inc., Setagaya, Tokyo 157-8540, Japan
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Yasuno Yoshinobu
Kobayasi Institute of Physical Research, Kokubunji, Tokyo 185-0022, Japan
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Kidokoro Kenichi
RION Co., Ltd., Kokubunji, Tokyo 185-8533, Japan
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Tajima Toshifumi
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Yasuno Yoshinobu
Kobayasi Institute Of Physical Research
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Iguchi Yoshinori
Nhk Engineering Services Inc.
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Tajima Toshifumi
Nhk Science And Technology Research Laboratories
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Kidokoro Kenichi
Rion Co. Ltd.
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