Luminescence Properties of Eu2+-Doped Green-Emitting Sr-Sialon Phosphor and Its Application to White Light-Emitting Diodes

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概要

• 論文の詳細を見る

• We developed a green-emitting phosphor Sr3Si13Al3O2N21:Eu2+ that is highly luminescent under excitation by blue light. It shows a highly efficient green luminescence whose external quantum efficiency reaches 67% for 460 nm excitation, and has small thermal quenching. Using this phosphor, we obtained white light-emitting diodes (LEDs) whose luminous efficacy and color rendering index $R_{a}$ at 5330 K are 62 lm/W and 87, respectively. These features show that this green-emitting phosphor has high potential for application to white LEDs.

• Japan Society of Applied Physicsの論文
• 2009-01-25

著者

• Ishida Kunio

  Corporate Research And Development Center Toshiba Corporation

• Mitsuishi Iwao

  Corporate Research And Development Center Toshiba Corporation

• Fukuda Yumi

  Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-toshiba-cho, Saiwai-ku, Ka

• Nunoue Shinya

  Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-toshiba-cho, Saiwai-ku, Ka

• Fukuda Yumi

  Corporate Research And Development Center Toshiba Corporation

• Nunoue Shinya

  Corporate Research And Development Center Toshiba Corporation

• Fukuda Yumi

  Corporate Research & Development Center Toshiba Corporation

• Nunoue Shinya

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

関連論文

• Luminescence Properties of Eu2+-Doped Green-Emitting Sr-Sialon Phosphor and Its Application to White Light-Emitting Diodes
• Numerical Simulation on Light Output of UV-based White Light-Emitting Diodes with Multicolor Phosphor Blends
• Luminescence Properties of Eu^-Doped Red-Emitting Sr-Containing Sialon Phosphor
• Theoretical Study of Transient X-ray Speckles in Photoinduced Nucleation
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• InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
• High-Power 2.8 W Blue-Violet Laser Diode for White Light Sources
• Wavelength Dependence of Internal Electric Field on Local Structure of Green-Yellow InGaN/GaN Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)

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