InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range

スポンサーリンク

概要

• 論文の詳細を見る

• High-efficiency InGaN light-emitting diodes (LEDs) in the ``green gap'' range were fabricated on c-face sapphire (0001) substrates. Optical properties were enhanced by band engineering of active layers and optimization of growth conditions. Output power and external quantum efficiency of 11.0 mW and 24.7% for a 559 nm green-yellow LED and 4.7 mW and 13.3% for a 576 nm yellow LED with the injection current of 20 mA were achieved, respectively.

• 2013-11-25

著者

• Nunoue Shinya

  Corporate Research And Development Center Toshiba Corporation

• SAITO Shinji

  Corporate Research & Development Center, Toshiba Corporation

• Hwang Jongil

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Hashimoto Rei

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Nunoue Shinya

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

関連論文

• Luminescence Properties of Eu2+-Doped Green-Emitting Sr-Sialon Phosphor and Its Application to White Light-Emitting Diodes
• Numerical Simulation on Light Output of UV-based White Light-Emitting Diodes with Multicolor Phosphor Blends
• InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
• InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
• High-Power 2.8 W Blue-Violet Laser Diode for White Light Sources
• Wavelength Dependence of Internal Electric Field on Local Structure of Green-Yellow InGaN/GaN Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)

スポンサーリンク