InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range

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概要

• 論文の詳細を見る

著者

• SAITO Shinji

  Corporate Research & Development Center, Toshiba Corporation

• Hwang Jongil

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Hashimoto Rei

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Nunoue Shinya

  Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan

関連論文

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• InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
• InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
• High-Power 2.8 W Blue-Violet Laser Diode for White Light Sources
• Wavelength Dependence of Internal Electric Field on Local Structure of Green-Yellow InGaN/GaN Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)

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