Nunoue Shinya | Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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概要
- Nunoue Shinyaの詳細を見る
- 同名の論文著者
- Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japanの論文著者
関連著者
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Nunoue Shinya
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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SAITO Shinji
Corporate Research & Development Center, Toshiba Corporation
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Hashimoto Rei
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Nunoue Shinya
Corporate Research And Development Center Toshiba Corporation
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Hwang Jongil
Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Ishida Kunio
Corporate Research And Development Center Toshiba Corporation
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Mitsuishi Iwao
Corporate Research And Development Center Toshiba Corporation
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Nunoue Shinya
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-toshiba-cho, Saiwai-ku, Ka
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Hattori Yasushi
Corporate Research And Development Center Toshiba Corporation
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Fukuda Yumi
Corporate Research and Development Center, Toshiba Corporation, 1 Komukai-toshiba-cho, Saiwai-ku, Ka
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Fukuda Yumi
Corporate Research And Development Center Toshiba Corporation
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Fukuda Yumi
Corporate Research & Development Center Toshiba Corporation
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Nunoue Shinya
Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Hwang Jong-Il
Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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HUNG Hung
Corporate Research & Development Center, Toshiba Corporation
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HASHIMOTO Rei
Corporate Research & Development Center, Toshiba Corporation
著作論文
- Luminescence Properties of Eu2+-Doped Green-Emitting Sr-Sialon Phosphor and Its Application to White Light-Emitting Diodes
- Numerical Simulation on Light Output of UV-based White Light-Emitting Diodes with Multicolor Phosphor Blends
- InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
- InGaN Light-Emitting Diodes on c-Face Sapphire Substrates in Green Gap Spectral Range
- High-Power 2.8 W Blue-Violet Laser Diode for White Light Sources
- Wavelength Dependence of Internal Electric Field on Local Structure of Green-Yellow InGaN/GaN Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)