配線構造に起因する多並列MOSFETのスイッチング損失均等化

概要

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The electromagnetic field environment around a power semiconductor device is extremely important. This is because it can potentially affect the switching speed and thereby the switching loss of the device. Electromagnetic induction due to switching of devices causes a change in the gate voltage of the devices. This change in the gate voltage during the switching period causes drastic increase in current at short circuit and concentration of switching loss when many devices are connected in parallel.In this paper, we describe the influence of the wiring structure of power semiconductor devices on their switching characteristics using three-dimensional electromagnetic field analysis and circuit simulation. We also describe methods to improve the switching problems caused by the wiring structure of the main circuit and control circuit.
社団法人電気学会の論文
2009-06-01