Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Naka Nobuyuki

  Horiba Ltd.

• Kodera Masako

  Process & Manufacturing Engineering Center Toshiba Corp.

• Tsuchiya Norihiko

  Process And Manufacturing Engineering Center Toshiba Semiconductor Company

• Iguchi Tadashi

  Process And Manufacturing Engineering Center Toshiba Semiconductor Company

• TAMURA Mizuki

  Toshiba I. S. Corp.

• KAKINUMA Shigeru

  Horiba, Ltd.

• KASHIWAGI Shinsuke

  Horiba, Ltd.

• Kashiwagi Shinsuke

  Horiba Ltd.

• Kakinuma Shigeru

  Horiba Ltd.

関連論文

• Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure
• Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses
• Wet cleaning processing of VLSI devices by functional waters (電子デバイス)
• Nanoscale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence Spectroscopy, Raman Spectroscopy, and Finite Element Method Analyses
• Wet Cleaning Processing of VLSI Devices by Functional Waters
• Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-$k$ Structure

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