Wet cleaning processing of VLSI devices by functional waters (電子デバイス)

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概要

• 論文の詳細を見る

• We applied functional waters that was generated by an electrolytic cell of de-ionized water (DIW) or by gas-injecting method to LSI device processing such as post-cleaning of CMP (chemical mechanical planarization) or RIE (reactive ion etching). We confirmed that the functional waters could suppress not only leakage current between damascene Cu interconnect but also corrosion with interconnects. These phenomena are attributed to the alteration of open-circuit potentials of metals in functional waters and to effective removal of impurities. Moreover, we revealed that a corrosion current density in citric acid diluted with functional water was smaller than that diluted with DIW. Thus, we demonstrate functional waters have a high performance as rinsing solution.

• 社団法人電子情報通信学会の論文
• 2008-06-06

著者

• Kodera Masako

  Process & Manufacturing Engineering Center Toshiba Corp.

• MATSUI Yoshitaka

  Yokkaitchi Operations, Toshiba Corp.

• MIYASHITA Naoto

  Oita Operations, Toshiba Corp.

• Miyashita Naoto

  Oita Operations Toshiba Corp.

• Matsui Yoshitaka

  Yokkaitchi Operations Toshiba Corp.

関連論文

• Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure
• Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses
• Wet cleaning processing of VLSI devices by functional waters (電子デバイス)
• Nanoscale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence Spectroscopy, Raman Spectroscopy, and Finite Element Method Analyses
• Wet Cleaning Processing of VLSI Devices by Functional Waters
• Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-$k$ Structure

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