Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• TSUJIMURA Manabu

  Ebara Corporation, Precision Machinery Company, Semiconductor Equipment Division

• KODERA Masako

  Process and Manufacturing Engineering Center, Toshiba Semiconductor Company

• MOCHIZUKI Yoshihiro

  Ebara Research Corp.

• FUKUDA Akira

  Ebara Research Corp.

• HIYAMA Hirokuni

  Ebara Research Corp.

• Kodera Masako

  Process & Manufacturing Engineering Center Toshiba Corp.

• Tsujimura Manabu

  Ebara Corp.

• Hiyama Hirokuni

  Ebara Corporation, Fujisawa, Kanagawa 251-8502, Japan

関連論文

• Effects of Oxidizer in Metal CMP Slurry on Open Circuit Potential Change during Metal Polishing
• Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure
• Stress Analyses during Chemical Mechanical Planarization Processing with Cu/Porous Low-k Structures of LSI Devices
• Pumping Effect in an Axially Vibrating Choke Nozzle : Pump Performance
• The Effect of Pumping in a Vertically Vibrating Pipe : Experimental Study on Flow Mechanism in a Pump
• Removal Rate Simulation of Dissolution-Type Electrochemical Mechanical Polishing
• Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses
• Wet cleaning processing of VLSI devices by functional waters (電子デバイス)
• Nanoscale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence Spectroscopy, Raman Spectroscopy, and Finite Element Method Analyses
• Wet Cleaning Processing of VLSI Devices by Functional Waters
• Shear Stress Analyses in Chemical Mechanical Planarization with Cu/Porous Low-$k$ Structure

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