Stability of Phosphorus-doped p-ZnO thin films
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Yun Sun
Basic Research Laboratory Etri
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KIM Jun
Univ. of Science and Technology, Dept. of Next Generation Device Engineering
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LIM Jung
Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunicati
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KIM Hyun-Tak
Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunicati
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KIM Sang
Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunicati
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YUN Sun
Univ. of Science and Technology, Dept. of Next Generation Device Engineering
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LIM Jung
Terahertz Devices Team, Electronics and Telecommunications Research Institute
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Kim Jun
Univ. Of Science And Technology Dept. Of Next Generation Device Engineering
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Lim Jung
Terahertz Devices Team Electronics And Telecommunications Research Institute
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Kim Sang
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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Lim Jung
Teraelectronics Device Team It-convergence & Components Laboratory Electronics And Telecommunica
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Lim Jung
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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Kim Hyun-Tak
Teraelectronic Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
関連論文
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- Stability of Phosphorus-doped p-ZnO thin films
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- 20pWG-12 Mott metal-insulator transition (MIT) & structural phase transition (SPT) : analysis of coherent phonons in VO_2
- 20pWG-13 Separation of Mott metal-insulator transition and structural phase transition in VO_2
- 28aUE-9 Mott transition observed by micro-Raman scattering in VO_2
- Low-Voltage dc Thin-Film Electroluminescence with an Indium-Tin-Oxide/CaS:Pb/ZnS/Al Structure
- Abrupt metal insulator transition of TiO_2 and Al_xTi_O_y thin films
- Nanolaminated Ta_2O_5-Al_2O_3 Insulator Effect on Luminescent and Electrical Properties of Thin-Film Electroluminescent Devices
- Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition