Vanadium Dioxide Films Deposited on Amorphous SiO2- and Al2O3-Coated Si Substrates by Reactive RF-Magnetron Sputter Deposition

概要

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VO2 films showing abrupt metal–insulator transition (MIT) were fabricated on amorphous-film-coated Si wafers by reactive RF-magnetron sputter deposition using a V-metal target, and postdeposition annealing. The amorphous films were thermally grown SiO2 or Al2O3 films deposited by low-temperature plasma-enhanced atomic layer deposition. The effects of the underlayer and chamber pressure governing oxidation ambient on MIT characteristics were investigated. The MIT of VO2 films deposited at 5 mTorr on SiO2 and Al2O3 induced resistance changes of $1.3\times 10^{4}$ and $2.3\times 10^{3}$, respectively. The resistance change due to MIT was larger than $6.3\times 10^{3}$ in an operating pressure range as wide as 5–25 mTorr on SiO2.
2008-04-25