Nanolaminated Ta_2O_5-Al_2O_3 Insulator Effect on Luminescent and Electrical Properties of Thin-Film Electroluminescent Devices

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Yun Sun

  Basic Research Laboratory Etri

• KIM Yong

  Basic Research Laboratory, Electronics and Telecommunications Research Institute

• Yun Sun

  Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)

関連論文

• Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition
• Programmable VO_2 temperature sensor controlled by a constant voltage
• Stability of Phosphorus-doped p-ZnO thin films
• Vanadium Dioxide Films Deposited on SiO_2- and Al_2O_3-coated Si Substrates Using Reactive RF-Magnetron Sputter Deposition Technique
• 20pWG-12 Mott metal-insulator transition (MIT) & structural phase transition (SPT) : analysis of coherent phonons in VO_2
• 20pWG-13 Separation of Mott metal-insulator transition and structural phase transition in VO_2
• 28aUE-9 Mott transition observed by micro-Raman scattering in VO_2
• Low-Voltage dc Thin-Film Electroluminescence with an Indium-Tin-Oxide/CaS:Pb/ZnS/Al Structure
• Nanolaminated Ta_2O_5-Al_2O_3 Insulator Effect on Luminescent and Electrical Properties of Thin-Film Electroluminescent Devices

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