Vanadium Dioxide Films Deposited on SiO_2- and Al_2O_3-coated Si Substrates Using Reactive RF-Magnetron Sputter Deposition Technique
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Yun Sun
Basic Research Laboratory Etri
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Chae Byung-gyu
ETRI
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YUN Sun
Terahertz Devices Team, Electronics and Telecommunications Research Institute
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LIM Jung
Terahertz Devices Team, Electronics and Telecommunications Research Institute
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CHAE Byung-Gyu
Terahertz Devices Team, Electronics and Telecommunications Research Institute
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KIM Hyun-Tak
Terahertz Devices Team, Electronics and Telecommunications Research Institute
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Lim Jung
Terahertz Devices Team Electronics And Telecommunications Research Institute
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Yun Sun
Terahertz Devices Team Electronics And Telecommunications Research Institute
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- Vanadium Dioxide Films Deposited on SiO_2- and Al_2O_3-coated Si Substrates Using Reactive RF-Magnetron Sputter Deposition Technique
- 20pWG-12 Mott metal-insulator transition (MIT) & structural phase transition (SPT) : analysis of coherent phonons in VO_2
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