Novel threshold voltage fine control method for FETs within a wafer using LDSi (Locally Differentiated Scanning ion implant)
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Park Sung
R&d Division Hynix Semiconductor Inc.
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PARK Sung
R&D Division, Hynix Semiconductor Inc.
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Joung Yong
R&d Division Hynix Semiconductor Inc.
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ROUH Kyoung
R&D Division, Hynix Semiconductor Inc.
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LEE Min
R&D Division, Hynix Semiconductor Inc.
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JIN Seung
R&D Division, Hynix Semiconductor Inc.
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SOHN Yong
R&D Division, Hynix Semiconductor Inc.
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JOUNG Yong
R&D Division, Hynix Semiconductor Inc.
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KI Young
R&D Division, Hynix Semiconductor Inc.
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HAN Il
R&D Division, Hynix Semiconductor Inc.
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SONG Yong
R&D Division, Hynix Semiconductor Inc.
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Rouh Kyoung
R&d Division Hynix Semiconductor Inc.
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Sohn Yong
R&d Division Hynix Semiconductor Inc.
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Han Il
R&d Division Hynix Semiconductor Inc.
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Lee Min
R&d Division Hynix Semiconductor Inc.
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Song Yong
R&d Division Hynix Semiconductor Inc.
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Ki Young
R&d Division Hynix Semiconductor Inc.
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Jin Seung
R&d Division Hynix Semiconductor Inc.
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PARK Sung
R&D Division, Hynix Semiconductor Inc.
関連論文
- Retention Time Analysis on DRAM Cell Transistor from Planar to Nonplanar Gate Structures(Session 4 Silicon Devices II,AWAD2006)
- Retention Time Analysis on DRAM Cell Transistor from Planar to Nonplanar Gate Structures(Session 4 Silicon Devices II,AWAD2006)
- Retention Time Analysis on DRAM Cell Transistor from Planar to Nonplanar Gate Structures
- Novel threshold voltage fine control method for FETs within a wafer using LDSi (Locally Differentiated Scanning ion implant)
- Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti