Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Hess Gisela
Institute For Semiconductor Technology Darmstadt University Of Technology
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Heller Rudolf
Institute For Semiconductor Technology Darmstadt University Of Technology
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Schwalke Udo
Institute For Semiconductor Technology Darmstadt University Of Technology
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Schwalke Udo
Institute For Semiconductor Technology And Nanoelectronics Darmstadt University Of Technology
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STEFANOV Yordan
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology
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RISPAL Lorraine
Institute for Semiconductor Technology, Darmstadt University of Technology
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TZSCHOCKEL Gerhard
Institute for Semiconductor Technology, Darmstadt University of Technology
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HABERLE Klaus
Institute for Semiconductor Technology, Darmstadt University of Technology
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Stefanov Yordan
Institute For Semiconductor Technology And Nanoelectronics Darmstadt University Of Technology
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Stefanov Yordan
Institute For Semiconductor Technology Darmstadt University Of Technology
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Rispal Lorraine
Institute For Semiconductor Technology Darmstadt University Of Technology
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Tzschockel Gerhard
Institute For Semiconductor Technology Darmstadt University Of Technology
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Haberle Klaus
Institute For Semiconductor Technology Darmstadt University Of Technology
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Rispal Lorraine
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
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- Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-Aligned Process and Effect on Device Transfer Characteristic Hysteresis
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