Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-Aligned Process and Effect on Device Transfer Characteristic Hysteresis
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概要
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Hysteresis in carbon nanotube field-effect transistors (CNTFETs) is an important issue that should be solved in the face of an integration in the complementary metal oxide semiconductor (CMOS) technology. One possible way is the passivation of the devices with poly(methyl methacrylate) (PMMA). In this work, PMMA-passivated CNTFETs are produced with a novel self-aligned fabrication process. The nanotubes are grown in-situ by chemical vapor deposition over the wafer surface so that no complex manipulations are required. The unique step of lithography avoids misalignment. With this suitable fabrication process, more than 6000 passivated transistors have recently been fabricated very easily in our institute. The devices are working like p-type MOSFET with on/off ratios of up to several $10^{6}$, are fully functional even at ultralow supply voltages (e.g., 400 mV drain voltage, $-3$ to 3 V gate voltages) and show reduced hysteresis effects (e.g., 580 mV at $I_{\text{ds}}$ of $10^{-8}$ A).
- 2008-04-25
著者
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Schwalke Udo
Institute For Semiconductor Technology And Nanoelectronics Darmstadt University Of Technology
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Rispal Lorraine
Institute For Semiconductor Technology Darmstadt University Of Technology
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Yang Hongyu
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
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Tschischke Tobias
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
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Rispal Lorraine
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
関連論文
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- Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors
- Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition
- Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-Aligned Process and Effect on Device Transfer Characteristic Hysteresis
- Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy