Yang Hongyu | Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
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概要
- Yang Hongyuの詳細を見る
- 同名の論文著者
- Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germanyの論文著者
関連著者
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Schwalke Udo
Institute For Semiconductor Technology And Nanoelectronics Darmstadt University Of Technology
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Rispal Lorraine
Institute For Semiconductor Technology Darmstadt University Of Technology
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Yang Hongyu
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
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Rispal Lorraine
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
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Hess Gisela
Institute For Semiconductor Technology Darmstadt University Of Technology
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Heller Rudolf
Institute For Semiconductor Technology Darmstadt University Of Technology
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Schwalke Udo
Institute For Semiconductor Technology Darmstadt University Of Technology
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RISPAL Lorraine
Institute for Semiconductor Technology, Darmstadt University of Technology
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YANG Hongyu
Institute for Semiconductor Technology, Darmstadt University of Technology
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TZSCHOCKEL Gerhard
Institute for Semiconductor Technology, Darmstadt University of Technology
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Yang Hongyu
Institute For Semiconductor Technology Darmstadt University Of Technology
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Tzschockel Gerhard
Institute For Semiconductor Technology Darmstadt University Of Technology
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Tschischke Tobias
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
著作論文
- Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors
- Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-Aligned Process and Effect on Device Transfer Characteristic Hysteresis