TZSCHOCKEL Gerhard | Institute for Semiconductor Technology, Darmstadt University of Technology
スポンサーリンク
概要
- TZSCHOCKEL Gerhardの詳細を見る
- 同名の論文著者
- Institute for Semiconductor Technology, Darmstadt University of Technologyの論文著者
関連著者
-
Hess Gisela
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Heller Rudolf
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Schwalke Udo
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Schwalke Udo
Institute For Semiconductor Technology And Nanoelectronics Darmstadt University Of Technology
-
RISPAL Lorraine
Institute for Semiconductor Technology, Darmstadt University of Technology
-
TZSCHOCKEL Gerhard
Institute for Semiconductor Technology, Darmstadt University of Technology
-
Rispal Lorraine
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Tzschockel Gerhard
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Rispal Lorraine
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
-
STEFANOV Yordan
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology
-
YANG Hongyu
Institute for Semiconductor Technology, Darmstadt University of Technology
-
HABERLE Klaus
Institute for Semiconductor Technology, Darmstadt University of Technology
-
Stefanov Yordan
Institute For Semiconductor Technology And Nanoelectronics Darmstadt University Of Technology
-
Stefanov Yordan
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Yang Hongyu
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Haberle Klaus
Institute For Semiconductor Technology Darmstadt University Of Technology
-
Yang Hongyu
Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, D-64289, Germany
著作論文
- Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors
- Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition