Device Characteristics of FETs Made From a p-doped Polythiophene Solution
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Yoshida Manabu
Functional Condensed Materials Group Research Institute Of Photonics National Institute Of Advanced
-
Kodzasa T
National Institute Of Advanced Industrial Science And Technology
-
UEMURA Sei
National Institute of Advanced Industrial Science and Technology
-
YOSHIDA Manabu
National Institute of Advanced Industrial Science and Technology
-
HOSHINO Satoshi
National Institute of Advanced Industrial Science and Technology
-
KODZASA Takehito
National Institute of Advanced Industrial Science and Technology
-
HOSHINO Satoshi
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
-
YOSHIDA Manabu
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
-
UEMURA Sei
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
-
KODZASA Takehito
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
-
KAMATA Toshihide
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
-
Kamata T
National Inst. Advanced Ind. Sci. And Technol. Ibaraki Jpn
-
Kamata Toshihide
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Hoshino S
National Institute Of Advanced Industrial Science And Technology
-
Kamata Toshihide
Functional Condensed Materials Group Research Institute Of Photonics National Institute Of Advanced
-
Hoshino Satoshi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
関連論文
- Temporal Changes in Source-Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface
- Transient Current Characteristics of Organic Field Effect Transistors with Polymer and Inorganic Gate Insulators
- Development of a Printed Dielectric Layer for Organic Transistors
- Device Characteristics of FETs Made From a p-doped Polythiophene Solution
- Electrode Effects of Organic Thin-Film Transistor with Top and Bottom Contact Configuration
- Low Temperature Solution Processed SiO_2 Insulator Thin Films for Organic FET
- Observation of Photoassisted Electroluminescent Emission Enhanced by Near-Infrared Irradiation
- Third Harmonic Generation Measurements for Halogen-Doped One-Dimensional Nickel Complexes
- Spectral Imaging for Electroluminescence Characterization of a Polymer-Blend Light-Emitting Diode
- Isolation and Characterization of Arsenate-Sensitive and Resistant Mutants of Chlamydomonas reinhardtii