Device Characteristics of FETs Made From a p-doped Polythiophene Solution
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Yoshida Manabu
Functional Condensed Materials Group Research Institute Of Photonics National Institute Of Advanced
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Kodzasa T
National Institute Of Advanced Industrial Science And Technology
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UEMURA Sei
National Institute of Advanced Industrial Science and Technology
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YOSHIDA Manabu
National Institute of Advanced Industrial Science and Technology
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HOSHINO Satoshi
National Institute of Advanced Industrial Science and Technology
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KODZASA Takehito
National Institute of Advanced Industrial Science and Technology
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HOSHINO Satoshi
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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YOSHIDA Manabu
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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UEMURA Sei
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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KODZASA Takehito
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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KAMATA Toshihide
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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Kamata T
National Inst. Advanced Ind. Sci. And Technol. Ibaraki Jpn
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Kamata Toshihide
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hoshino S
National Institute Of Advanced Industrial Science And Technology
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Kamata Toshihide
Functional Condensed Materials Group Research Institute Of Photonics National Institute Of Advanced
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Hoshino Satoshi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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