Development of Field-Effect Transistor-Type Photorewritable Memory Using Photochromic Interface Layer
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概要
- 論文の詳細を見る
We developed a novel field-effect transistor (FET) type photorewritable memory using a photochromic interface layer between the active layer and the gate insulator layer. A diarylethene (DAE) derivative was employed as a photochromic material and pentacene was employed as an active layer. DAE has two types of photoisomer, i.e., the closed- and open-ring isomers. In this study, it was clarified that the highest occupied molecular orbital (HOMO) level of the closed-ring DAE worked as an interfacial deep trap level, and that the generation of the interfacial deep trap level by photoisomerization induced the photoswitching and photomemory behaviors of transistor properties.
- 2010-04-25
著者
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SUEMORI Kouji
National Institute of Advanced Industrial Science and Technology
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UEMURA Sei
National Institute of Advanced Industrial Science and Technology
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YOSHIDA Manabu
National Institute of Advanced Industrial Science and Technology
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Sei Uemura
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Satoshi Hoshino
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Takehito Kodzasa
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Noriyuki Takada
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Toshihide Kamata
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Manabu Yoshida
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Kouji Suemori
National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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