Effect of Silicon Dioxide Surface on Bias Stress Effect for Organic Field-Effect Transistors
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概要
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We have investigated the effect of the surface roughness and surface wettability of silicon dioxide (SiO2) on the threshold voltage shift caused by gate bias stressing in organic field-effect transistors (OFETs). We observed that the threshold voltage shift was extremely sensitive to changes in the small roughness of the SiO2 surface; the shift increased with roughness. On the other hand, the threshold voltage shift was not significantly affected by the wettability of the SiO2 surface. The large shift in OFETs with rough SiO2 insulators can be attributed to lattice distortion in pentacene layers deposited on rough SiO2 surfaces. We observed that long-time application of gate bias stress caused not only a threshold voltage shift but also a mobility decrease.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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SUEMORI Kouji
National Institute of Advanced Industrial Science and Technology
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TANIGUCHI Misuzu
National Institute of Advanced Industrial Science and Technology
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KAMATA Toshihide
National Institute of Advanced Industrial Science and Technology
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Taniguchi Misuzu
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Kamata Toshihide
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Suemori Kouji
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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