Effect of Built-in Potential under Drain Electrodes on Threshold Voltage of Organic Field-Effect Transistors
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概要
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The effect of source and drain electrode species on threshold voltage was investigated using top-contact pentacene organic field-effect transistors (OFETs) with several different types of metals as source and drain electrodes. Threshold voltage mainly depended on drain electrode species and not on source electrode species. Most devices showed that threshold voltage did not depend on channel length ($L$) for $L = 20--100$ μm, indicating that the contact resistance of source and drain electrodes does not affect the threshold voltage owing to a long channel length. For such a long channel length, the effect of the electrode species on the threshold voltage was dominated by the built-in potential under the drain electrode.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
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YOSHIDA Manabu
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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UEMURA Sei
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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KODZASA Takehito
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST
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Kamata Toshihide
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hoshino Satoshi
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Hoshino Satoshi
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
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Suemori Kouji
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
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Kamata Toshihide
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
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Yoshida Manabu
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
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Suemori Kouji
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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