C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates

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概要

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2000-08-28

著者

KAWASAKI M.
Department of Innovative and Engineered Materials Tokyo Institute of Technology
AITA T.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
OHTOMO A.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
MATSUKURA F.
Research Institute of Electronic Communication, Tohoku University
Ohtomo A.
IMR Tohoku Univ.
MATSUKURA F.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
OHNO H.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
Ohno Y.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
Saikusa K.
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
OHMAKI Y.
Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku U
KISHIMOTO S.
Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku U
Adachi T.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
Matsukura F.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
Katsumoto S.
Institute For Solid State Physics University Of Tokyo
Kawasaki M.
Crest-jst:wpi-aimr Tohoku Univ.
Ohtomo A.
Dept. Of Innovative And Engineered Mat. Tokyo Inst. Of Tech.

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