Magnetotransport Properties of (Ga,Mn)As/GaAs/(Ga,Mn)As Trilayer Structures
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概要
- 論文の詳細を見る
All-semiconductor ferromagnet/nonmagnet/ferromagnet trilayer structures using (Ga,Mn)As as a ferromagnetic layer and GaAs a nonmagnetic layer were prepared and their magnetotransport properties were investigated. The results show that the interaction between the two (Ga,Mn)As layers decreases as the GaAs thickness increases. This shows that the carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers in the present all-semiconductor system.
- 社団法人日本磁気学会の論文
- 1999-01-20
著者
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MATSUKURA F.
Research Institute of Electronic Communication, Tohoku University
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MATSUKURA F.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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OHNO H.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Ohno Y.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Iye Y.
Institute For Solid State Physics University Of Tokyo
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Akiba N.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Shen A.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Oiwa A.
Institute for Solid State Physics, University of Tokyo
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Katsumoto S.
Institute for Solid State Physics, University of Tokyo
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Matsukura F.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Oiwa A.
Institute For Solid State Physics University Of Tokyo
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Katsumoto S.
Institute For Solid State Physics University Of Tokyo
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Shen A.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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