Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
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概要
- 論文の詳細を見る
In this paper, it is shown that our fabricated MTJ of 60x180nm^2, which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14μm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with 10nsec sampling rate, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60x180nm^2 MTJ is less than 30ns with its programming current of 500μA and the resistance change of 1.7kΩ.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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OHNO H.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Iga F.
Center For Interdisciplinary Research Tohoku University
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Hanyu T.
Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University
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Kamiyanagi M.
Center for Interdisciplinary Research, Tohoku University
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Ikeda S.
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Miura K.
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Hayakawa J.
Hitachi Advanced Research Laboratory
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Hasegawa H.
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Endoh T.
Center for Interdisciplinary Research, Tohoku University
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Kamiyanagi M.
Center For Interdisciplinary Research Tohoku University
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Endoh T.
Center For Interdisciplinary Research Tohoku University
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Miura K.
Laboratory For Nanoelectronics And Spintronics Research Institute Of Electrical Communication Tohoku University:hitachi Advanced Research Laboratory
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