Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/1-poly Gate 0.14μm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60x180nm^2 achieves a large change in resistance of 3.52kΩ (anti-parallel) with TMR ratio of 151% at room temperature, which is large enough for sensing scheme of standard CMOS logic. Furthermore, the write current is 320μA that can be driven by a standard MOS transistor. As the results, it is shown that the DC performance of our fabricated MTJ integrated in CMOS circuits is very good for our novel spin logic (MTJ-based logic) device.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• OHNO H.

  Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok

• Iga F.

  Center For Interdisciplinary Research Tohoku University

• Hanyu T.

  Laboratory For Brainware Systems Research Institute Of Electrical Communication Tohoku University

• Kamiyanagi M.

  Center for Interdisciplinary Research, Tohoku University

• Ikeda S.

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho

• Miura K.

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho

• Hayakawa J.

  Hitachi Advanced Research Laboratory

• Hasegawa H.

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho

• Endoh T.

  Center for Interdisciplinary Research, Tohoku University

• Kamiyanagi M.

  Center For Interdisciplinary Research Tohoku University

• Endoh T.

  Center For Interdisciplinary Research Tohoku University

• Miura K.

  Laboratory For Nanoelectronics And Spintronics Research Institute Of Electrical Communication Tohoku University:hitachi Advanced Research Laboratory

関連論文

• Electrical modulation of Curie temperature of (Ga,Mn)As channel in field-effect transistors : Mn composition dependence
• Spin-Polarized Current Injection in Ferromagnetic Semiconductor Heterostructure
• C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates
• Magnetotransport Properties of (Ga,Mn)As/GaAs/(Ga,Mn)As Trilayer Structures
• Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs
• Interband Faraday Rotation in Ferromagnetic Semiconductor (Ga, Mn)As
• Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit
• Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
• Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits
• Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit

スポンサーリンク