Katsumoto S. | Institute For Solid State Physics University Of Tokyo
スポンサーリンク
概要
関連著者
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MATSUKURA F.
Research Institute of Electronic Communication, Tohoku University
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Ohno Y.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Matsukura F.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Katsumoto S.
Institute For Solid State Physics University Of Tokyo
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KAWASAKI M.
Department of Innovative and Engineered Materials Tokyo Institute of Technology
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AITA T.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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OHTOMO A.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Ohtomo A.
IMR Tohoku Univ.
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MATSUKURA F.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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OHNO H.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Saikusa K.
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Adachi T.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Kawasaki M.
Crest-jst:wpi-aimr Tohoku Univ.
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Ohtomo A.
Dept. Of Innovative And Engineered Mat. Tokyo Inst. Of Tech.
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MATSUMOTO Y.
Department of Obstetrics and Gynecology, Hokkaido University School of Medicine
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Wang G.
Department Of Bioscience Fukui Prefectural University
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Tuan N.
Photodynamics Research Center Riken
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Segawa Y.
Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN)
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TAMURA K.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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SAIKUSA K.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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TSUKAZAKI A.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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JIN Z.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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FUKUMURA T.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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KOINUMA H.
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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OHMAKI Y.
Research Institute of Electronic Communication, Tohoku University
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KISHIMOTO S.
Research Institute of Electronic Communication, Tohoku University
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OHNO Y.
Research Institute of Electronic Communication, Tohoku University
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OHNO H.
Research Institute of Electronic Communication, Tohoku University
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MAKINO T.
Photodynamics Research Center, RIKEN
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SUN H.
Photodynamics Research Center, RIKEN
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CHIA C.
Photodynamics Research Center, RIKEN
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TANG Z.
Department of Physics, The Hong Kong University of Science and Technology
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Tsukazaki A.
IMR Tohoku Univ.
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Wang G.
Department Of Physics The Hong Kong University Of Science And Technology
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Iye Y.
Institute For Solid State Physics University Of Tokyo
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OHMAKI Y.
Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku U
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KISHIMOTO S.
Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku U
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Akiba N.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Shen A.
Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok
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Oiwa A.
Institute for Solid State Physics, University of Tokyo
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Katsumoto S.
Institute for Solid State Physics, University of Tokyo
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Tang Z.
Department Of Physics The Hong Kong University Of Science And Technology
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Oiwa A.
Institute For Solid State Physics University Of Tokyo
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Shen A.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Sugawara Y.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Fukumura T.
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Kimura H.
Dept. Of Innovative And Engineered Mat. Tokyo Inst. Of Tech.
著作論文
- Can ZnO Eat Market in Optoelectronic Applications?
- C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates
- Magnetotransport Properties of (Ga,Mn)As/GaAs/(Ga,Mn)As Trilayer Structures