Deactivation of Boron in Highly Boron-Doped Silicon
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Mitani Y.
R&d Center Toshiba Corporation
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MIZUSHIMA I.
Microelectronics Engineering Laboratory, Toshiba Corporation
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MITANI Y.
R&D Center, Toshiba Corporation
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KAMBAYASHI S.
R&D Center, Toshiba Corporation
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KOIKE M.
R&D Center, Toshiba Corporation
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YOSHIKI M.
R&D Center, Toshiba Corporation
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TOMITA M.
R&D Center, Toshiba Corporation
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Kambayashi S.
R&d Center Toshiba Corporation
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Mizushima I.
Microelectronics Engineering Laboratory Toshiba Corporation
関連論文
- Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon : A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Deactivation of Boron in Highly Boron-Doped Silicon
- Diffusion of Carbon in SiO_2 Films and Its Segregation at Si/SiO_2 Interface
- Mechanism of Defect Formation during Low Temperature Si Epitaxy on Clean Si Substrate