Mizushima I. | Microelectronics Engineering Laboratory Toshiba Corporation
スポンサーリンク
概要
関連著者
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MIZUSHIMA I.
Microelectronics Engineering Laboratory, Toshiba Corporation
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Mizushima I.
Microelectronics Engineering Laboratory Toshiba Corporation
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Mitani Y.
R&d Center Toshiba Corporation
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KAMBAYASHI S.
R&D Center, Toshiba Corporation
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Kambayashi S.
R&d Center Toshiba Corporation
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MITANI Y.
R&D Center, Toshiba Corporation
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KOIKE M.
R&D Center, Toshiba Corporation
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YOSHIKI M.
R&D Center, Toshiba Corporation
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Miyano K.
Microelectronics Engineering Laboratory Toshiba Corporation
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MIYANO K.
Microelectronics Engineering Laboratory, Toshiba Corporation
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TOMITA M.
R&D Center, Toshiba Corporation
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KAMIYA H.
Microelectronics Engineering Laboratory, Toshiba Corporation
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ARAI N.
Toshiba Microelectronics Corporation
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SONODA M.
Semiconductor Manufacturing Engineering Center, Toshiba Corporation
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TAKAGI S.
R&D Center, Toshiba Corporation
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WAKAMIYA M.
Semiconductor Manufacturing Engineering Center, Toshiba Corporation
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MIKATA Y.
Semiconductor Manufacturing Engineering Center, Toshiba Corporation
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MORI S.
Microelectronics Engineering Laboratory, Toshiba Corporation
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KASHIWAGI M.
R&D Center, Toshiba Corporation
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SATO T.
Microelectronics Engineering Laboratory, Toshiba Corporation
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TSUNASHIMA Y.
Microelectronics Engineering Laboratory, Toshiba Corporation
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Tsunashima Y.
Microelectronics Engineering Laboratory Toshiba Corporation
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Wakamiya M.
Semiconductor Manufacturing Engineering Center Toshiba Corporation
著作論文
- Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon : A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Deactivation of Boron in Highly Boron-Doped Silicon
- Diffusion of Carbon in SiO_2 Films and Its Segregation at Si/SiO_2 Interface
- Mechanism of Defect Formation during Low Temperature Si Epitaxy on Clean Si Substrate