Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon : A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• Mitani Y.

  R&d Center Toshiba Corporation

• MIZUSHIMA I.

  Microelectronics Engineering Laboratory, Toshiba Corporation

• MITANI Y.

  R&D Center, Toshiba Corporation

• MIYANO K.

  Microelectronics Engineering Laboratory, Toshiba Corporation

• KAMBAYASHI S.

  R&D Center, Toshiba Corporation

• Kambayashi S.

  R&d Center Toshiba Corporation

• Miyano K.

  Microelectronics Engineering Laboratory Toshiba Corporation

• Mizushima I.

  Microelectronics Engineering Laboratory Toshiba Corporation

関連論文

• Oxide Mediated Solid Phase Epitaxy (OMSPE) of Silicon : A New Low Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
• Deactivation of Boron in Highly Boron-Doped Silicon
• Diffusion of Carbon in SiO_2 Films and Its Segregation at Si/SiO_2 Interface
• Mechanism of Defect Formation during Low Temperature Si Epitaxy on Clean Si Substrate

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