Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl_2/CF_4 Inductively Coupled Plasma

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-05-15

著者

• KWON Kwang-Ho

  Department of Electronic Engineering, Hanseo Unviersity

• Lee Yong-eui

  Electronics And Telecommunications Research Institute

• YUN Sun

  Electronics and Telecommunications Research Institute

• KIM Chang-Il

  School of Electrical & Electronic Engineering, Chung-Ang University

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• Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl_2/CF_4 Inductively Coupled Plasma
• Energy Level Structure of Amorphous Silicon Carbide
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• Etch Characteristics of ZrO2 Thin Films in High Density Plasma
• Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4 Inductively Coupled Plasma

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