Etch properties of TiN thin film in metal-insulator-metal capacitor using inductively coupled plasma (Special issue: Dry process)

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概要

• 論文の詳細を見る

著者

• KIM Chang-Il

  School of Electrical & Electronic Engineering, Chung-Ang University

• Woo Jong-Chang

  School of Electrical and Electronics Engineering, Chung-Ang University, 221, Heukseuk-dong, Dongjak-gu, Seoul 156-756, Korea

• Park Jung-Soo

  School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-759, Korea

関連論文

• Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl_2/CF_4 Inductively Coupled Plasma
• Etch characterization of TiO2 thin films using metal-insulator-metal capacitor in adaptively coupled plasma (Special issue: Dry process)
• Etch properties of TiN thin film in metal-insulator-metal capacitor using inductively coupled plasma (Special issue: Dry process)
• Etch Characteristics of ZrO2 Thin Films in High Density Plasma
• Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4 Inductively Coupled Plasma

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