Seedless Fill-Up of the Damascene Structure Only by Copper Electroless Plating

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概要

• 論文の詳細を見る

• We attempted to fill up seedlessly the damascene pattern in ULSI interconnection only by Cu electroless plating. Cu2O content, which was generally detected in Cu electroless plating, was removed through controlling the plating temperature. Optimum control in electrolyte concentration and plating temperature leaded to good characteristics of electrolessly plated Cu with 2.1 μ$\Omega$$\cdot$cm resistivity, 8.9 nm rms roughness at 160 nm thickness, good adhesion and 10 nm/min deposition rate. The optimum condition was successfully applied to a damascene pattern with aspect ratio of 3 and via size of 0.13 μm without void and seam.

• Japan Society of Applied Physicsの論文
• 2003-08-01

著者

• Cha Seung

  Research Center For Energy Conversion And Storage School Of Chemical Engineering College Of Engineer

• Kim Jae

  Research Center For Energy Conversion And Storage School Of Chemical Engineering College Of Engineer

• Lee Young-soo

  Department Of Environmental Engineering College Of Engineering Kwangwoon University

関連論文

• Optimized Surface Treatment of Indium Tin Oxide (ITO) for Copper Electroless Plating
• Seedless Fill-Up of the Damascene Structure Only by Copper Electroless Plating
• Wide-Viewing-Angle Transflective Display Associated with a Fringe-Field Driven Homogeneously Aligned Nematic Liquid Crystal Display
• A Novel Transflective Liquid Crystal Display with a Periodically Patterned Electrode
• A Multimode-Type Transflective Liquid Crystal Display Using the Hybrid-Aligned Nematic and Parallel-Rubbed Vertically Aligned Modes
• A Novel Method for Cu Electrodeposition on Indium Tin Oxide Aided by Two-Step Sn-Pd Activation
• A Novel Process to Control the Surface Roughness and Resistivity of Electroplated Cu Using Thiourea

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