An Investigation of Optical Excitationand Detection of Piezoelectric Vibrations
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-05-01
著者
-
Noge Satoru
Department Of Electrical And Electronic Engineering Kanagawa Institute Of Technology
-
Uno Takehiko
Department Of Electrical And Electronic Engineering Kanagawa Institute Of Technology
-
Kurita Mie
Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)
-
KURITA Mie
Department of Electrical and Electronic Engineering Kanagawa Institute of Technology
関連論文
- Josephson Current in Microbridges of YBa_2Cu_3O_ Thin Films Prepared by CVD
- Bridge Type Josephson Junctions in MO-CVD Thin Films
- Instability in a Weakly Ionized Afterglow Plasma with a Magnetic Field in a Short Tube
- Residuals Caused by the CF_4 Gas Plasma Etching Process
- Study of the Microscopic Surface Structure of a Quartz Substrate for Surface Acoustic Wave Devices
- Piezoelectric Resonance Properties of a β Phase Quartz Plate
- Crystallinity of Ce Substituted YIG Films Prepared by RF Sputtering
- Properties of Ce-Substituted Yttrium Iron Garnet Film Containing Indium Prepared by RF-Sputtering
- Twinning of a Quartz Plate at Low Temperature Using a Laser Beam
- Cut angle dependences of resonant characteristics of β-phase quartz (Special issue: Ultrasonic electronics)
- An Investigation of Optical Excitationand Detection of Piezoelectric Vibrations
- Bulk Acoustic Wave Filter Using Piezoelectrically Coupled Resonators
- Josephson Effects at 77 K in Grain Boundary Bridge Made of Thick Films : Electrical Properties of Condensed Matter
- Natural Polarization Phenomenon of Superstructure Film Composed of Metal-Doped Silica Layers
- Proposal of Solidly Mounted Resonator Type Functional Devices
- Behaviors of Dielectric Superlattice Thin Films Composed of Silicate Glass Nanolayers
- Bonding Technology of Semiconductor Film on Piezoelectric Substrate Using Epitaxial Lift-Off Technology
- Piezoelectricity of Poled Silica Containing Thermal Diffused Tetravalent Elements