直接噴霧方式気化器の実用化の検討

概要

論文の詳細を見る
Thin film with high dielectric constant will be used for the capacitors in future 256-Mbyte and 1-Gbyte DRAMs (dynamic random access memory). The sources of these thin films are liquid phase under normal conditions. In order to deposit thin films on the complicated structure on DRAM cells, it is necessary to vaporize the sources. A new type of vaporizer, called a direct-injection vaporizer, injects these sources directly into the reactor, where they form very fine droplets that are vaporized by the radiation from a susceptor and thermal conduction from gases in the reactor. The basic performance of the vaporizer has already been studied. The current work therefore analyzes the particles and contamination of the liquid sources, which are produced by the operation of the vaporizer, in class-1 cleanroom. The numbers of particles and the level of contamination are sufficiently low to be acceptable in semiconductor manufacturing. The vaporizer uses a PET (penta ethoxy tantalum) source to deposit a thin Ta<SUB>2</SUB>O<SUB>5</SUB> film on a 200-mm-diameter wafer. The deposited film is analyzed and found to have the same compsition as one deposited by a commercial vaporizer.
日本真空協会の論文
2000-02-20